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1

Nanograin Formation and Superplastic Deformation in TiAl Mechanically Alloyed Compacts

Ameyama, Kei, Fujii, T., Okumura, Tsugunori, Sodeoka, Satoshi, Tokizane, M.

Journal:

Materials Science Forum

Year:

1997

File:

PDF, 813 KB

1997

2

Ideal GaAs Schottky contacts fabricated by in situ photoelectrochemical etching and electrodeposition

Tsugunori Okumura, Chinami Kaneshiro

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Year:

1999

Language:

english

File:

PDF, 195 KB

english, 1999

3

Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD

Naoya Asaoka, Hiroki Funato, Michihiko Suhara, Tsugunori Okumura

Journal:

Applied Surface Science

Year:

2003

Language:

english

File:

PDF, 226 KB

english, 2003

4

Effects of plasma-induced defects on electrical characteristics of AlGaN/GaN heterostructure before and after low-temperature annealing

Takimoto, Takuma, Takeshita, Koji, Nakamura, Seiji, Okumura, Tsugunori

Journal:

Thin Solid Films

Year:

2014

Language:

english

File:

PDF, 591 KB

english, 2014

5

Photo-enhanced reactivation of Si donors deactivated by plasma-induced defects in n-type GaN

Seiji Nakamura, Yuki Ikadai, Masayuki Suda, Michihiko Suhara, Tsugunori Okumura

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 175 KB

english, 2007

6

Invited: Deep Levels in GaAs and GaP

Ikoma, Toshiaki, Takikawa, Masahiko, Okumura, Tsugunori

Journal:

Japanese Journal of Applied Physics

Year:

1977

File:

PDF, 1.23 MB

1977

7

A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes

Susumu Ohki, Hiroki Funato, Michihiko Suhara, Tsugunori Okumura, Lars-Erik Wernersson, Werner Seifert

Journal:

Applied Surface Science

Year:

2002

Language:

english

File:

PDF, 141 KB

english, 2002

8

[IEEE 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials - Matsue, Japan (2007.05.14-2007.05.18)] 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials - Fundamental Properties of Intentionally Neutralized Argon Fast ATM Beam Etching for III-V Semiconductors

Suhara, Michihiko, Naoi, Mamoru, Matsuzaka, Norihiko, Matsuura, Eigo, Okumura, Tsugunori

Year:

2007

Language:

english

File:

PDF, 3.65 MB

english, 2007

9

New physical model to explain logarithmic time dependence of data retention in flash EEPROM

Shiro Kamohara, Tsugunori Okumura

Journal:

Applied Surface Science

Year:

2008

Language:

english

File:

PDF, 303 KB

english, 2008

10

Properties of metastable hydrogen-related defects in n-type GaAs studied by isothermal deep-level transient spectroscopy

Tokuda, Yutaka, Kamiya, Kazuhiro, Okumura, Tsugunori

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 253 KB

english, 2000

11

Comparison between process-induced defects in n-GaAs exposed to hydrogen and argon plasmas

Tatsuyuki Shinagawa, Tsugunori Okumura

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 388 KB

english, 1997

12

[IEEE 2012 IEEE Sensors - Taipei, Taiwan (2012.10.28-2012.10.31)] 2012 IEEE Sensors - Selective hydrogen detection of Pd/AlGaN/GaN HEMT-type sensors by temperature sweep operation

Watanabe, Akifumi, Nakamura, Seiji, Okumura, Tsugunori

Year:

2012

Language:

english

File:

PDF, 773 KB

english, 2012

13

GaAs Schottky Diodes with Ideality Factor of Unity Fabricated by In Situ Photoelectrochemical Process

Okumura, Tsugunori, Yamamoto, Shin-ichi, Shimura, Michiko

Journal:

Japanese Journal of Applied Physics

Year:

1993

File:

PDF, 1.13 MB

1993

14

Microscopic Characterization of Schottky Barrier Height by Scanning Internal-Photoemission Microscopy.

Okumura, Tsugunori

Journal:

Year:

1995

File:

PDF, 2.64 MB

1995

15

Relationship Between Hydrogen-Related Metastable Defect And EL2-Level In GaAs Crystals

Shinagawa, Tatsuyuki, Okumura, Tsugunori

Journal:

MRS Proceedings

Year:

1996

Language:

english

File:

PDF, 398 KB

english, 1996

16

Statistical p–n Junction Leakage Model via Trap Level Fluctuation for Refresh-Time-Oriented Dynamic Random Access Memory Design

Kamohara, Shiro, Kubota, Katsuhiko, Moniwa, Masahiro, Okumura, Tsugunori

Journal:

Japanese Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 205 KB

english, 2008

17

Low Barrier Height and Nonuniformity in Al Schottky Contacts on Chemically Etched n-GaAs

Okumura, Tsugunori, Shibata, Takeshi

Journal:

Japanese Journal of Applied Physics

Year:

1988

File:

PDF, 805 KB

1988

18

Dominant Deep Level in Annealed Low-Temperature GaAs Layers Grown by Molecular Beam Epitaxy

Lin, Tsai-Cheng, Kaibe, Hiromasa T., Okumura, Tsugunori

Journal:

Japanese Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 378 KB

english, 1994

19

[IEEE 2007 65th Annual Device Research Conference - South Bend, IN, USA (2007.06.18-2007.06.20)] 2007 65th Annual Device Research Conference - Dispersion Design of a Left-Handed Microstrip Line with Planar Double-Stub and Split-Ring Structures for Leaky Wave Radiation toward Functional RF Wireless Interconnect

Suhara, Michihiko, Shimizu, Akito, Okumura, Tsugunori

Year:

2007

Language:

english

File:

PDF, 851 KB

english, 2007

20

Scanning Internal-Photoemission Microscopy: New Mapping Technique to Characterize Electrical Inhomogeneity of Metal-Semiconductor Interface

Okumura, Tsugunori, Shiojima, Kenji

Journal:

Japanese Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 314 KB

english, 1989

21

Hydrogen-Related Electron Traps in GaAs and their Relation to Crystal Stoichiometry

Shinagawa, Tatsuyuki, Okumura, Tsugunori

Journal:

MRS Proceedings

Year:

1995

Language:

english

File:

PDF, 420 KB

english, 1995

22

Thermoelectric properties of melt-grown and sintered PbTe-SnTe solid solutions.

KAIBE, Hiromasa T., YONEDA, Seiji, OKUMURA, Tsugunori, SHIMAZAKI, Yoshiki, IMAI, Yoshio, NISHIDA, Isao A., SHIOTA, Ichiro

Journal:

Journal of Advanced Science

Year:

1995

Language:

english

File:

PDF, 949 KB

english, 1995

23

Mapping evaluation of damage effect on electrical properties of GaAs Schottky contacts

Kenji Shiojima, Tsugunori Okumura

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 575 KB

english, 1990

24

Room-Temperature Characterization of Midgap Level (EL2) in GaAs Diodes without Metallization Processes

Okumura, Tsugunori, Hoshino, Minoru

Journal:

Japanese Journal of Applied Physics

Year:

1986

Language:

english

File:

PDF, 134 KB

english, 1986

25

DLTS Study on Annealed Low-Temperature GaAs Layers with An n-I(LT)-n Structure Grown by MBE

Lin, Tsai-Cheng, Kaibe, Hiromasa T, Okumura, Tsugunori

Journal:

MRS Proceedings

Year:

1995

Language:

english

File:

PDF, 406 KB

english, 1995

26

Effect of substrate temperature in chloroaluminum phthalocyanine thin films deposition studied by scanning tunneling microscopy and tunneling spectroscopy

Takashi Ohmori, Hideki Masuda, Michiko Shimura, Junichi Kuroda, Tsugunori Okumura

Journal:

Thin Solid Films

Year:

1998

Language:

english

File:

PDF, 653 KB

english, 1998

27

Direct Trap-Density Analysis with Junction Capacitance Transient: Trap Density Spectroscopy (TDS)

Okumura, Tsugunori

Journal:

Japanese Journal of Applied Physics

Year:

1985

File:

PDF, 327 KB

1985

28

Role of the EL2 Center on the Formation of Metastable Hydrogen-related Defects (M3/M4) in n-GaAs

Shinagawa, Tatsuyuki, Okumura, Tsugunori

Journal:

Japanese Journal of Applied Physics

Year:

1998

File:

PDF, 1.03 MB

1998

29

Characterization of Argon Fast Atom Beam Source and Application to Mesa Etching Process for GaInP/GaAs Triple-Barrier Resonant Tunneling Diodes

Suhara, Michihiko, Matsuzaka, Norihiko, Fukumitsu, Masakazu, Okumura, Tsugunori

Journal:

Japanese Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 175 KB

english, 2006

30

Deep levels and growth conditions of LPE GaAs crystals

Tsugunori Okumura, Toshiaki Ikoma

Journal:

Journal of Crystal Growth

Year:

1978

Language:

english

File:

PDF, 669 KB

english, 1978

31

[IEEE 2006 64th Device Research Conference - State College, PA, USA (2006.06.26-2006.06.28)] 2006 64th Device Research Conference - A Proposal of Broadband High-Q Monolithic Active Inductors by Using Resonant Tunneling Diodes

Suhara, Michihiko, Horie, Hajime, Okumura, Tsugunori

Year:

2006

Language:

english

File:

PDF, 1.93 MB

english, 2006

32

Kelvin-SPV Measurements of Atomically-Flat Si(111) Surfaces Contaminated with Metallic Ions

Tagawa, T., Okumura, Tsugunori

Journal:

Solid State Phenomena

Year:

1999

File:

PDF, 279 KB

1999

33

Anomalous Enhancement of In-Diffusion of Plasma-Induced Defects in GaN upon Ultraviolet-Light Irradiation

Nakamura, Seiji, Hoshino, Koichi, Ikadai, Yuki, Suda, Masayuki, Okumura, Tsugunori

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 418 KB

english, 2013

34

Determination of dissolved oxygen using electrochromism of cobalt naphthalocyanine electrode.

SHIMURA, Michiko, OKUMURA, Tsugunori, OZAWA, Kin-ichi, SHIMURA, Yukio

Journal:

Journal of The Surface Finishing Society of Japan

Year:

1991

File:

PDF, 267 KB

1991

35

Preface

Tsugunori Okumura, Takashi Fukui, Hideki Hasegawa

Journal:

Applied Surface Science

Year:

2002

Language:

english

File:

PDF, 31 KB

english, 2002

36

Preface

Yukio Yasuda, Tsugunori Okumura

Journal:

Applied Surface Science

Year:

2008

Language:

english

File:

PDF, 77 KB

english, 2008

37

Single crystal growth and thermoelectric properties of Bi2Te3 compounds with graded carrier concentration

Kaibe, Hiromasa T., Okumura, Tsugunori, Nishida, Isao A.

Journal:

IEEJ Transactions on Fundamentals and Materials

Year:

1996

File:

PDF, 2.65 MB

1996

38

Detection of ppm-order hydrogen gas by Pd/AlGaN/GaN high electron mobility transistor-based sensors

Seiji Nakamura, Noriyuki Takahashi, Tsugunori Okumura

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 153 KB

english, 2009

39

Electron and hole traps in N-GaAs crystals

Tsugunori Okumura, Masahiko Takikawa, Toshiaki Ikoma

Journal:

Applied Physics A: Materials Science & Processing

Year:

1976

Language:

english

File:

PDF, 172 KB

english, 1976

40

Improvement in Spatial Resolution of Infrared Scanning Internal-Photoemission Microscope

Shiojima, Kenji, Okumura, Tsugunori

Journal:

Japanese Journal of Applied Physics

Year:

1991

File:

PDF, 524 KB

1991

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